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Total dose radiation effects on SOI NMOS transistors with different layouts
Partially-depleted Silicon-On-Insulator Negative Channel Metal Oxide Semiconductor (SOI NMOS)transistors with different layouts are fabricated on radiation hard Separation by IMplanted OXygen (SIMOX)substrate and tested using 10 keV X-ray radiation sources.The radiation performance is characterized by transistor threshold voltage shift and transistor leakage currents as a function of the total dose up to 2.0×106 rad(Si).The results show that the total dose radiation effects on NMOS devices are very sensitive to their layout structures.
作 者： TIAN Hao ZHANG Zheng-Xuan HE Wei YU Wen-Jie WANG Ru CHEN Ming 作者單位： TIAN Hao,HE Wei,YU Wen-Jie,WANG Ru,CHEN Ming(Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Graduate University of Chinese Academy of Sciences,Beijing 100049,China)ZHANG Zheng-Xuan(Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China)
刊 名： 中國物理C(英文版) ISTIC 英文刊名： CHINESE PHYSICS C 年，卷(期)： 2008 32(8) 分類號： O4 關(guān)鍵詞： SIMOX SOI total dose radiation effect MOS transistors【Total dose radiation effects on SOI 】相關(guān)文章：
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