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Radiation response of pseudo-MOS transistors fabricated in hardened fully-depleted SIMOX SOI wafers
The total dose radiation response of pseudo-MOS transistors fabricated in hardened and unhardened FD (fully-depleted) SIMOX (Separation by Implanted Oxygen) SOI (Silicon-on-insulator) wafers is presented.At 1 Mrad(Si) radiation dose, the threshold voltage shift of the pseudo-MOS transistor is reduced from -115.5 to -1.9 V by the hardening procedure.The centroid location of the net positive charge trapped in BOX, the hole-trap density and the hole capture fraction of BOX are also shown.The results suggest that hardened FD SIMOX SOI wafers can perform well in a radiation environment.
作 者： BI Da-Wei ZHANG Zheng-Xuan ZHANG Shuai CHEN Ming YU Wen-Jie WANG Ru TIAN Hao LIU Zhang-Li 作者單位： The State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China 刊 名： 中國物理C(英文版) ISTIC 英文刊名： CHINESE PHYSICS C 年，卷(期)： 2009 33(10) 分類號： O4 關鍵詞： SOI pseudo-MOS transistor total dose radiation ion implantation【Radiation response of pseudo-MOS tra】相關文章：
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